Features: · Double-data-rate architecture· DDR266 and DDR333• JEDEC design specifi cations· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2,5 (clock)· Programmable Burst Length (2,4,8)· Programmable Burst type (sequential & inter...
WV3EG128M72EFSR: Features: · Double-data-rate architecture· DDR266 and DDR333• JEDEC design specifi cations· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Laten...
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Features: · Double-data-rate architecture· DDR266 and DDR333 • JEDEC design specifi cations·...
Features: ·Double-data-rate architecture·PC2700@CL=2.5·Bi-directional data strobes (DQS)·Different...
Features: ` Fast data transfer rate: PC-2100 and PC-2700` Clock speeds of 133 MHz and 166 MHz` Two...
Symbol |
Parameter |
Rating |
Units |
VIN, VOUT |
Voltage on any pin relative to VSS |
-0.5 to 3.3 |
V |
VCC |
Voltage on VCC supply relative to VSS |
-1.0 to 3.6 |
V |
VCCQ |
Voltage on VCC supply relative to VSS |
-1.0 to 3.6 |
V |
TSTG |
Storage Temperature |
-55 to +150 |
°C |
PD |
Power Dissipation |
18 |
W |
IOS |
Short Circuit Current |
50 |
mA |
The WV3EG128M72EFSR is a 128Mx72 Double Data Rate SDRAM memory module based on 512Mb DDR SDRAM component. The module consists of eighteen 64Mx8 DDR components in FBGA packages mounted on a 184 Pin FR4 substrate.
Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lenths allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.
* This product is under development, is not qualifi ed or characterized and is subject to change or cancellation without notice.