WV3EG6437S

Features: · Unbuffered Double-data-rate architecture· DDR300 and DDR400- JEDEC design specifi cations· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2.5, 3· Programmable Burst Length (2,4,8)· Programmable Burst type (sequential & interle...

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SeekIC No. : 004546965 Detail

WV3EG6437S: Features: · Unbuffered Double-data-rate architecture· DDR300 and DDR400- JEDEC design specifi cations· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read ...

floor Price/Ceiling Price

Part Number:
WV3EG6437S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

· Unbuffered Double-data-rate architecture
· DDR300 and DDR400- JEDEC design specifi cations
· Bi-directional data strobes (DQS)
· Differential clock inputs (CK & CK#)
· Programmable Read Latency 2.5, 3
· Programmable Burst Length (2,4,8)
· Programmable Burst type (sequential & interleave)
· Edge aligned data output, center aligned data input
· Auto and self refresh, (8K/64ms Refresh)
· Serial presence detect with EEPROM
· Dual Rank
· Power Supply: VCC = VCC: 2.5V ± 0.2V (DDR300) VCC = VCCQ: 2.6V ± 0.1V (DDR400)
· JEDEC standard 200 pin SO-DIMM package 
  - Package height options: D4: 31.75mm (1.25") TYP



Specifications

Parameter
Symbol
Value
Units
Voltage on any pin relative to VSS
VIN, VOUT
-0.5 to 3.6
V
Voltage on VCC supply relative to VSS
VCC, VCCQ
-0.5 to 3.6
V
Storage Temperature
TSTG
-55 to +150
Operating Temperature
TA
0 - 70
Power Dissipation
PD
8
W
Short Circuit Current
IOS
50
mA
Note:
Permanent device damage may occur if "ABSOLUTE MAXIMUM RATINGS" are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability.



Description

The WV3EG6437S is a 2x16Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 16Mx16 DDR SDRAMs in 66 pin TSOP package mounted on a 200 Pin FR4 substrate.




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