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WV3EG32M64ETSU-D3

Features: · Double-data-rate architecture· PC2700 @ CL 2.5· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2.5 (clock)· Programmable Burst Length (2,4,8)· Programmable Burst type (sequential & interleave)· Edge aligned data output, cent...

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SeekIC No. : 004546963 Detail

WV3EG32M64ETSU-D3: Features: · Double-data-rate architecture· PC2700 @ CL 2.5· Bi-directional data strobes (DQS)· Differential clock inputs (CK & CK#)· Programmable Read Latency 2,2.5 (clock)· Programmable Burst L...

WV3EG32M64ETSU-D3 Data Sheet

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Part Number:
WV3EG32M64ETSU-D3
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Description



Features:

· Double-data-rate architecture
· PC2700 @ CL 2.5
· Bi-directional data strobes (DQS)
· Differential clock inputs (CK & CK#)
· Programmable Read Latency 2,2.5 (clock)
· Programmable Burst Length (2,4,8)
· Programmable Burst type (sequential & interleave)
· Edge aligned data output, center aligned data input.
· Auto and self refresh, (8K/64ms refresh)
· Serial presence detect with EEPROM
· Power supply:
• VCC = VCCQ = +2.5V ±0.2V
· 184 pin DIMM package
• D3 PCB height: 28.58mm (1.125")
NOTE: Consult factory for availability of:
• RoHS compliant products
• Vendor source control options
• Industrial temperature optio


Specifications

Parameter Symbol Value Units
Voltage on any pin relative to VSS VIN, VOUT -0.5 to 3.6 V
Voltage on VCC supply relative to VSS VCC -1.0 to 3.6 V
Voltage on VCCQ supply relative to VSS VCCQ -0.5 to 3.6 V
Storage Temperature TSTG -55 to +150
Power Dissipation PD 8 W
Short Circuit Current IOS 50 mA
Note: Permanent device damage may occur if 'ABSOLUTE MAXIMUM RATINGS' are exceeded.
Functional operation should be restricted to recommended operating condition.
Exposure to higher than recommended voltage for extended periods of time could affect device reliability


Description

The WV3EG32M64ETSU-D3 is a 32Mx64 Double Data Rate SDRAM memory module based on 256Mb DDR SDRAM components. The module consists of eight 32Mx8 DDR SDRAMs in 66 pin TSOP packages mounted on a 184 pin substrate.

Synchronous design allows precise cycle control with the use of system clock. Data I/O transactions are possible on both edges and Burst Lengths allow the WV3EG32M64ETSU-D3 to be useful for a variety of high bandwidth, high performance memory system applications.




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