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WSF128K32-XH2X

Features: Access Times of 25ns (SRAM) and 70, 90 and 120ns (FLASH) Packaging:• 66-pin, PGA Type, 1.385 inch square HIP, Hermetic Ceramic HIP (Package 402) 128Kx32 SRAM 128Kx32 5V Flash Organized as 128Kx32 of SRAM and 128Kx32 of Flash Memory with common Data Bus Low Power CMOS Commercial, I...

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SeekIC No. : 004546758 Detail

WSF128K32-XH2X: Features: Access Times of 25ns (SRAM) and 70, 90 and 120ns (FLASH) Packaging:• 66-pin, PGA Type, 1.385 inch square HIP, Hermetic Ceramic HIP (Package 402) 128Kx32 SRAM 128Kx32 5V Flash Organi...

WSF128K32-XH2X Data Sheet

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Part Number:
WSF128K32-XH2X
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/21

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Product Details

Description



Features:

Access Times of 25ns (SRAM) and 70, 90 and 120ns (FLASH)
Packaging:
• 66-pin, PGA Type, 1.385 inch square HIP, Hermetic Ceramic HIP (Package 402)
128Kx32 SRAM
128Kx32 5V Flash
Organized as 128Kx32 of SRAM and 128Kx32 of Flash Memory with common Data Bus
Low Power CMOS
Commercial, Industrial and Military Temperature Ranges
TTL Compatible Inputs and Outputs
Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation
 Weight - 13 grams typical

FLASH MEMORY FEATURES
10,000 Erase/Program Cycles
Sector Architecture
• 8 equal size sectors of 16K bytes each
• Any combination of sectors can be concurrently erased. Also supports full chip erase
5 Volt Programming; 5V ± 10% Supply
Embedded Erase and Program Algorithms
Hardware Write Protection
Page Program Operation and Internal Program Control Time.
* This product is under development, not fully characterized, and is subject to change without notice.
Note: Programming information available upon request.




Specifications




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PARAMETER SYMBOL MIN MAX UNIT
Operating Temperature

Storage Temperature

Signal Voltage Relative to GND

Junction Temperature

Supply Voltage		 TA

TSTG

VG

TJ

VCC		 -55

-65

-0.5



-0.5		 +125

+150

7.0

150

7.0
°C

°C

V

°C

V