WEDPZ512K72V-XBX

The WEDPZ512K72V-XBX SyncBurst - SRAM employs high-speed, low-power CMOS design that is fabricated using an advanced CMOS process. WEDPZ512K72V-XBX's 32Mb SyncBurst SRAMs integrate two 512K x 36 SSRAMs into a single BGA package to provide 512K x 72 confi guration. All synchronous inputs pass through registers controlled by a positive-edge-triggered single-clock input (CLK). The ZBL or Zero Bus Latency Memory utilizes all the bandwidth in any combination of operating cycles. Address, data inputs, and all control signals except output enable and linear burst order are synchronized to input clock. Burst order control must be tied "High or Low." Asynchronous inputs include the sleep mode enable (ZZ). Output Enable controls the outputs at any given time. Write cycles are internally self-timed and initiated by the rising edge of the clock input. This feature eliminates complex off-chip write pulse generation and provides increased timing fl exibility for incoming signals.