WCMA4016U1X

The WCMA4016U1X is a high-performance CMOS static RAM organized as 262,144 words by 16 bits. This device features advanced circuit design to provide ultra-low active current and standby current. This is ideal for providing more battery life in portable applications such as cellular telephones.

The WCMA4016U1X also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The WCMA4016U1X can also be put into standby mode when deselected (CE₁ HIGH or CE₂ LOW or bothBHE andBLE are HIGH). The input/output pins (I/O₀ through I/O₁₅) are placed in a high-impedance state when: deselected (CE₁HIGH or CE₂ LOW), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE₁ LOW, CE₂ HIGH and WE LOW).

Writing to the WCMA4016U1X is accomplished by taking Chip Enables (CE₁ LOW and CE₂ HIGH) and Write Enable (WE) input LOW.

If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O₀ through I/O₇), is written into the location specified on the address pins (A₀ through A₁₈). If Byte High Enable (BHE) is LOW, then data from I/O pins (I/O₈ through I/O₁₅) is written into the location specified on the address pins (A₀ through A₁₈).

Reading from the WCMA4016U1X is accomplished by taking Chip Enables (CE₁ LOW and CE₂ HIGH) and Output Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then data from the memory location specified by the address pins will appear on I/O₀ to I/O₇. If Byte High Enable (BHE) is LOW, then data from memory will appear on I/O₈ to I/O₁₅. See the truth table at the back of this datasheet for a complete description of read and write modes.