Features: • 2.7V − 3.6V power supply• Up to 200 MHz clock frequency• 524,288 words x 2 banks x 16 bits organization• Self Refresh Current: standard and low power• CAS latency: 2 and 3• Burst length: 1, 2, 4, 8, and full page• Burst read, single write...
W9816G6BB: Features: • 2.7V − 3.6V power supply• Up to 200 MHz clock frequency• 524,288 words x 2 banks x 16 bits organization• Self Refresh Current: standard and low power•...
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ITEM | SYMBOL |
RATING |
UNIT |
NOTES |
Input, Output Voltage | VIN,VOUT |
-0.3 - 4.6 |
V |
1 |
Power Supply Voltage | VDD, VDDQ |
-0.3~4.6 |
V |
1 |
Operating Temperature | TOPR |
0~70 |
°C |
1 |
Storage Temperature | TSTG |
-55~150 |
°C |
1 |
Soldering Temperature(10s) | TSOLDER |
260 |
°C |
1 |
Power Dissipation | PD |
1 |
W |
1 |
Short Circuit Output Current | IOUT |
50 |
mA |
1 |
W9816G6BB is a high-speed synchronous dynamic random access memory (SDRAM), organized as 512K words x 2 banks x 16 bits. Using pipelined architecture and 0.175 m process technology, W9816G6BB delivers a data bandwidth of up to 286M bytes per second (-7).
Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing W9816G6BB address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.
By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W9816G6BB is ideal for main memory in high performance applications.