W981208BH

Features: · 3.3V ±0.3V Power Supply· Up to 143 MHz Clock Frequency· 4,194,304 Words ´ 4 banks ´ 8 bits organization· Auto Refresh and Self Refresh· CAS Latency: 2 and 3· Burst Length: 1, 2, 4, 8, and full page· Burst Read, Single Writes Mode· Byte Data Controlled by DQM· Power-Down Mod...

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W981208BH Picture
SeekIC No. : 004545344 Detail

W981208BH: Features: · 3.3V ±0.3V Power Supply· Up to 143 MHz Clock Frequency· 4,194,304 Words ´ 4 banks ´ 8 bits organization· Auto Refresh and Self Refresh· CAS Latency: 2 and 3· Burst Length: 1,...

floor Price/Ceiling Price

Part Number:
W981208BH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/11/20

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Product Details

Description



Features:

· 3.3V ±0.3V Power Supply
· Up to 143 MHz Clock Frequency
· 4,194,304 Words ´ 4 banks ´ 8 bits organization
· Auto Refresh and Self Refresh
· CAS Latency: 2 and 3
· Burst Length: 1, 2, 4, 8, and full page
· Burst Read, Single Writes Mode
· Byte Data Controlled by DQM
· Power-Down Mode
· Auto-Precharge and Controlled Precharge
· 4K Refresh cycles /64 mS
· Interface: LVTTL
· Packaged in TSOP II 54 pin, 400 mil - 0.80



Pinout

  Connection Diagram


Specifications

ITEM SYMBOL
RATING
UNIT
Input, Output Voltage VIN,VOUT
-0.3~ Vcc +0.3
V
Power Supply Voltage VCC,VCCQ
-0.3~4.6
V
Operating Temperature TOPR
0~70
°C
Storage Temperature TSTG
-55~150
°C
Soldering Temperature(10s) TSOLDER
260
°C
Power Dissipation PD
1
W
Short Circuit Output Current IOUT
50
mA
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.


Description

W981208BH is a high-speed synchronous dynamic random access memory (SDRAM), organized as 4M words ×4 banks × 8 bits. Using pipelined architecture and 0.175 mm process technology, W981208BH delivers a data bandwidth of up to 143M words per second (-7). To fully comply with the personal computer industrial standard, W981208BH is sorted into three speed grades: -7, -75 and - 8H. The -7 is compliant to the 143 MHz/CL3 or PC133/CL2 specification, the -75 is compliant to the PC133/CL3 specification, the -8H is compliant to the PC100/CL2 specification

Accesses to the SDRAM are burst oriented. Consecutive memory location in one page can be accessed at a burst length of 1, 2, 4, 8 or full page when a bank and row is selected by an ACTIVE command. Column addresses are automatically generated by the SDRAM internal counter in burst operation. Random column read is also possible by providing its address at each clock cycle. The multiple bank nature enables interleaving among internal banks to hide the precharging time.

By having a programmable Mode Register, the system can change burst length, latency cycle, interleave or sequential burst to maximize its performance. W981208BH is ideal for main memory in high performance applications.




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