Features: • Single 3.3-volt operations:− 3.3-volt Read− 3.3-volt Erase− 3.3-volt Program• Fast program operation:− VPP = 12V− Byte-by-Byte programming: 9 S (typ.)• Fast erase operation:− Sector erase 0.9 Sec. (typ.)• Fast read access time...
W39V080FA: Features: • Single 3.3-volt operations:− 3.3-volt Read− 3.3-volt Erase− 3.3-volt Program• Fast program operation:− VPP = 12V− Byte-by-Byte programming: 9 S ...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
PARAMETER | RATING | UNIT |
Power Supply Voltage to VSS Potential | -0.5 to +4.0 | V |
Operating Temperature | 0 to +70 | |
Storage Temperature | -65 to +150 | |
D.C. Voltage on Any Pin to Ground Potential | -0.5 to VDD +0.5 | V |
VPP Voltage | -0.5 to +13 | V |
Transient Voltage (<20 nS) on Any Pin to Ground Potential | -1.0 to VDD +0.5 | V |
The W39V080FA is an 8-megabit, 3.3-volt only CMOS flash memory organized as 1M × 8 bits. For flexible erase capability, the 8Mbits of data are divided into 16 uniform sectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is required for accelerated program. The unique cell architecture of the W39V080FA results in fast program/erase operations with extremely low current consumption. This device can operate at two modes, Programmer bus interface mode and FWH bus interface mode. As in the Programmer interface mode, it acts like the traditional flash but with a multiplexed address inputs. But in the FWH interface mode, this device complies with the Intel FWH specification. The device can also be programmed and erased using standard EPROM programmers.