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W39V040B

Features: • Single 3.3-volt operations: − 3.3-volt Read − 3.3-volt Erase − 3.3-volt Program• Fast Program operation: − Byte-by-Byte programming: 9 S (typ.) (VPP = 12V) − Byte-by-Byte programming: 12 S (typ.) (VPP = Vcc)• Fast Erase operation: −...

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SeekIC No. : 004544613 Detail

W39V040B: Features: • Single 3.3-volt operations: − 3.3-volt Read − 3.3-volt Erase − 3.3-volt Program• Fast Program operation: − Byte-by-Byte programming: 9 S (typ.) (VPP =...

W39V040B Data Sheet

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Part Number:
W39V040B
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Single 3.3-volt operations:
   − 3.3-volt Read
   − 3.3-volt Erase
   − 3.3-volt Program
• Fast Program operation:
   − Byte-by-Byte programming: 9 S (typ.) (VPP = 12V)
   − Byte-by-Byte programming: 12 S (typ.) (VPP = Vcc)
• Fast Erase operation:
   − Sector erase 0.6 Sec. (typ.)
• Fast Read access time: Tkq 11 nS
• Endurance: 10K cycles (typ.)
• Twenty-year data retention
• 8 Even sectors with 64K bytes
• Any individual sector can be erased
• Hardware protection:
   − #TBL supports 64-Kbyte Boot Block hardware protection
   − #WP supports the whole chip except Boot Block hardware protection
• Low power consumption
   − Active current: 15 mA (typ. for LPC read mode)
• Automatic program and erase timing with internal VPP generation
• End of program or erase detection
   − Toggle bit
   − Data polling
• Latched address and data
• TTL compatible I/O
• Available packages: 32L PLCC, 32L STSOP 32L PLCC Lead free, 32L STSOP Lead free


Pinout

Connection Diagram


Specifications

PARAMETER RATING UNIT
Operating Temperature 0 to +70 °C
Storage Temperature -65 to +150 °C
Power Supply Voltage to Vss Potential -0.5 to +4.0 V
D.C. Voltage on Any Pin to Ground Potential -0.5 to VDD +0.5 V
VPP Voltage -0.5 to +13 V
Transient Voltage (<20 nS ) on Any Pin to Ground Potential -1.0 to VDD +1.0 V




Description

The W39V040B is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is required for accelerated program. The unique cell architecture of the W39V040B results in fast program/erase operations with extremely low current consumption. This device can operate at two modes, Programmer bus interface mode, Low pin count (LPC) bus interface mode. As in the Programmer interface mode, it acts like the traditional flash but with a multiplexed address inputs. But in the LPC interface mode, this device complies with the Intel LPC specification. The device can also be programmed and erased using standard EPROM programmers.




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