Features: • Single 3.3-volt operations: − 3.3-volt read − 3.3-volt erase − 3.3-volt program• Fast Program operation: − Byte-by-Byte programming: 35 S (typ.)• Fast erase operation: − Chip erase 100 mS (max.) − Sector erase 25 mS (max.) − P...
W39V040FA: Features: • Single 3.3-volt operations: − 3.3-volt read − 3.3-volt erase − 3.3-volt program• Fast Program operation: − Byte-by-Byte programming: 35 S (typ.)•...
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PARAMETER | RATING | UNIT |
Power Supply Voltage to Vss Potential | -0.5 to +4.6 | V |
Operating Temperature | 0 to +70 | °C |
Storage Temperature | -65 to +150 | °C |
D.C. Voltage on Any Pin to Ground Potential Except A9 | -0.5 to VDD +0.5 | V |
Transient Voltage (<20 nS ) on Any Pin to GrounPotential | -1.0 to VDD +0.5 | V |
The W39V040FA is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The device can be programmed and erased insystem with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39V040FA results in fast program/erase operations with extremely low current consumption. This device can operate at two modes, Programmer bus interface mode and FWH bus interface mode. As in the Programmer interface mode, it acts like the traditional flash but with a multiplexed address inputs. But in the FWH interface mode, this device complies with the Intel FWH specification. The device can also be programmed and erased using standard EPROM programmers.