Features: • Single 3.3-volt Operations:− 3.3-volt Read− 3.3-volt Erase− 3.3-volt Program• Fast Program Operation:− Byte-by-Byte programming: 35 S (typ.)• Fast Erase Operation:− Chip erase 100 mS (max.)− Sector erase 25 mS (max.)− Page era...
W39V040A: Features: • Single 3.3-volt Operations:− 3.3-volt Read− 3.3-volt Erase− 3.3-volt Program• Fast Program Operation:− Byte-by-Byte programming: 35 S (typ.)• Fa...
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PARAMETER |
RATING |
UNIT |
Power Supply Voltage to VSS Potential |
-2.0 to +4.6 |
V |
Operating Temperature |
0 to +70 |
°C |
Storage Temperature |
-65 to +150 |
°C |
D.C. Voltage on Any Pin to Ground Potential | -0.5 to VDD +0.5 |
V |
Transient Voltage (<20 nS) on Any Pin to Ground Potential |
-1.0 to VDD +0.5 |
V |
The W39V040A is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39V040A results in fast program/erase operations with extremely low current consumption. This device can operate at two modes, Programmer bus interface mode and LPC bus interface mode. As in the Programmer interface mode, it acts like the traditional flash but with a multiplexed address inputs. But in the LPC interface mode, this device complies with the Intel LPC specification. The device can also be programmed and erased using standard EPROM programmers.