Features: Single 3.3-volt operations:− 3.3-volt Read− 3.3-volt Erase− 3.3-volt Program Fast Program operation:− Byte-by-Byte programming: 7 S (typ.) (VPP = 12V)− Byte-by-Byte programming: 10 S (typ.) (VPP = Vcc)Fast Erase operation:− Sector erase 0.6 Sec. (typ.)...
W39V040FC: Features: Single 3.3-volt operations:− 3.3-volt Read− 3.3-volt Erase− 3.3-volt Program Fast Program operation:− Byte-by-Byte programming: 7 S (typ.) (VPP = 12V)− Byte-b...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
PARAMETER | RATING | UNIT |
Operating Temperature | 0 to +70 | |
Storage Temperature | -65 to +150 | |
Power Supply Voltage to VSS Potential | -0.5 to +4.0 | V |
D.C. Voltage on Any Pin to Ground Potential | -0.5 to VDD +0.5 | V |
VPP Voltage | -0.5 to +13 | V |
Transient Voltage (<20 nS) on Any Pin to Ground Potential | -1.0 to VDD +0.5 | V |
Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings May adversely affect the life and eliability of the device.
The W39V040FC is a 4-megabit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 16 x 8 Kbytes pages and 6 x 64 Kbytes sectors or 8 x 64 Kbytes sectors. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is required for accelerated program. The unique cell architecture of the W39V040FC results in fast program/erase operations with extremely low current consumption. This device can operate at two modes, Programmer bus interface mode, Firmware Hub (FWH) bus interface mode. As in the Programmer interface mode, it acts like the traditional flash but with a multiplexed address inputs. But in the FWH interface mode, this device complies with the Intel FWH specification.
The device can also be programmed and erased using standard EPROM programmers.