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W39L512

Features: · Single 3.3 -volt operations - 3.3 -volt Read - 3.3 -volt Erase - 3.3 -volt Program· Fast Program operation: - Byte -by -Byte programming: 50 mS (max.)· Fast Erase operation: 100 mS (max.)· Read access time: 70/90 nS· 16 even pages with 4K bytes· Any individual page can be erased· Hardw...

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SeekIC No. : 004544611 Detail

W39L512: Features: · Single 3.3 -volt operations - 3.3 -volt Read - 3.3 -volt Erase - 3.3 -volt Program· Fast Program operation: - Byte -by -Byte programming: 50 mS (max.)· Fast Erase operation: 100 mS (max....

W39L512 Data Sheet

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Part Number:
W39L512
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/20

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Product Details

Description



Features:

· Single 3.3   -volt operations
   - 3.3   -volt Read
   - 3.3   -volt Erase
   - 3.3   -volt Program
· Fast Program operation:
   - Byte   -by   -Byte programming: 50 mS (max.)
· Fast Erase operation: 100 mS (max.)
· Read access time: 70/90 nS
· 16 even pages with 4K bytes
· Any individual page can be erased
· Hardware protection:
   - Optional 8K byte Top/Bottom Boot Block with lockout protection
· Flexible 4K   -page size can be used as Parameter Blocks
· Typical program/erase cycles:
   - 1K/10K
· Twenty   -year data retention
· Low power consumption
   - Active current: 10 mA (typ.)
   - Standby current: 15 mA (typ.)
· End of program detection
   - Software method: Toggle bit/Data polling
· TTL compatible I/O
· JEDEC standard byte   -wide pinouts
· Available packages: 32   -pin PLCC and 32  -pin STSOP (8 x 14 mm)


Pinout

Connection Diagram


Specifications

PARAMETER RATING UNIT
Power Supply Voltage to Vss Potential -2.0 to +4.6 V
Operating Temperature 0 to +70 °C
Storage Temperature -65 to +125 °C
Voltage on Any Pin to Ground Potential Except A9 -2.0 to +4.6 V
Voltage on A9 and OE Pin to Ground Potential -2.0 to +13.0 V




Description

The W39L512 is a 512Kbit, 3.3-volt only CMOS flash memory organized as 64K ´ 8 bits. For flexible erase capability, the 512Kbits of data are divided into 16 small even pages with 4 Kbytes. The bytewide (´ 8) data appears on DQ7 - DQ0. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39L512 results in fast program/erase operations with extremely low current consumption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.




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