Features: • Single 3.3-volt operations− 3.3-volt Read− 3.3-volt Erase− 3.3-volt Program• Fast Program operation:− Byte-by-Byte programming: 50 S (max.)• Fast Erase operation:− Chip Erase cycle time: 100 mS (max.)− Sector Erase cycle time: 25mS ...
W39L020: Features: • Single 3.3-volt operations− 3.3-volt Read− 3.3-volt Erase− 3.3-volt Program• Fast Program operation:− Byte-by-Byte programming: 50 S (max.)• Fas...
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PARAMETER |
RATING |
UNIT |
Power Supply Voltage to VSS Potential |
-2.0 to +4.6 |
V |
Operating Temperature |
0 to +70 |
°C |
Storage Temperature |
-65 to +125 |
°C |
Voltage on Any Pin to Ground Potential Except A9 |
-2.0 to +4.6 |
V |
Voltage on A9 Pin to Ground Potential |
-2.0 to +13.0 |
V |
The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide (× 8) data appears on DQ7 − DQ0. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39L020 results in fast program/erase operations with extremely low current consumption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.