Features: • 3V/3.3-Volt Read/Erase/Program Operations− 3.0 ~ 3.6V for 70nS− 2.7 ~ 3.6V for 90nS• Fast Program operation:− Byte-by-Byte programming: 9 S (typ.)• Fast Erase operation:− Chip Erase cycle time: 6 S (typ.)− Sector Erase cycle time: 0.7 S (...
W39L040A: Features: • 3V/3.3-Volt Read/Erase/Program Operations− 3.0 ~ 3.6V for 70nS− 2.7 ~ 3.6V for 90nS• Fast Program operation:− Byte-by-Byte programming: 9 S (typ.)• Fa...
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PARAMETER | RATING | UNIT |
Operating Temperature | 0 to +70 | |
Storage Temperature | -65 to +150 | |
Power Supply Voltage to VSS Potential | -0.5 to VDD+0.5 | V |
Voltage on Any Pin to Ground Potential except A9 | -0.5 to +4.0 | V |
Voltage on A9, #OE Pin to Ground Potential | -0.5 to +12.5 | V |
The W39L040A is a 4Mbit, 3V/3.3V CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The byte-wide (× 8) data appears on DQ7 − DQ0. The device can be programmed and erased in-system with a standard 3.3V power supply. A 12-volt VPP is not required. The unique cell architecture of the W39L040A results in fast program/erase operations with extremely low current consumption (compared to other comparable 3.3-volt flash memory products). The device can also be programmed and erased by using standard EPROM programmers.