Features: • Single 5V ( %) or 3.3V ( %) only power supply• High speed tRAC access time : 50/60 ns• Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 396/360 mW (Max.) - Standby mode : 5V version 1.375 mW (Max.) 3.3V version 0.54 mW (Max.)• Fast...
VG26(V)(S)17400E: Features: • Single 5V ( %) or 3.3V ( %) only power supply• High speed tRAC access time : 50/60 ns• Low power dissipation - Active mode : 5V version 605/550 mW (Max.) 3.3V version 3...
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Features: • Single 5V (±10%) or 3.3V (+10%,-5%) only power supply• High speed tRAC acc...
Features: • Single 5V(±10%) or 3.3V(+10%,-5%) only power supply• High speed t RAC aces...
DescriptionThe VG26V18165CJ5 is designed as one kind of CMOS Dynamic RAM device that is organized ...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to Vss 5V 3.3V |
VT | -1.0 to + 7.0 -0.5 to + 4.6 |
V |
Supply voltage relative to Vss 5V 3.3V |
VCC | -1.0 to + 7.0 -0.5 to + 4.6 |
V |
Short circuit output current | IOUT | 50 | mA |
Power dissipation | PD | 1.0 | W |
Operating temperature | TOPT | 0 to + 70 | |
Storage temperature | TSTG | -55 to + 125 |
The VG26(V)(S)17400E is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. VG26(V)(S)17400E is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power supply. Low voltage operation is more suitable to be used on battery backup, portable electronic application. A new refresh feature called " self-refresh " is supported and very slow CBR cycles are being performed. It is packaged in JEDEC standard 26/24 - pin plastic SOJ or TSOP (II).