Features: • Single 5V(±10%) or 3.3V(+10%,-5%) only power supply• High speed t RAC acess time: 50/60ns• Low power dissipation- Active wode : 5V version 660/605 mW (Mas) 3.3V version 432/396 mW (Mas)- Standby mode: 5V version 1.375 mW (Mas) 3.3V version 0.54 mW (Mas)• Extende...
VG26(V)(S)17405FJ: Features: • Single 5V(±10%) or 3.3V(+10%,-5%) only power supply• High speed t RAC acess time: 50/60ns• Low power dissipation- Active wode : 5V version 660/605 mW (Mas) 3.3V version...
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
DescriptionThe VG26V18165CJ5 is designed as one kind of CMOS Dynamic RAM device that is organized ...
Features: • Single 5V( %) or 3.3V( %) only power supply• High speed tRAC acess time: 5...
Features: • Single 5V ( %) or 3.3V ( %) only power supply• High speed tRAC access time...
Parameter | Symbol | Value | Unit |
Voltage on any pin relative to Vss 5V 3.3V |
VT | -1.0 to + 7.0 -0.5 to + 4.6 |
V |
Supply voltage relative to Vss 5V 3.3V |
VCC | -1.0 to + 7.0 -0.5 to + 4.6 |
V |
Short circuit output current | IOUT | 50 | mA |
Power dissipation | PD | 1.0 | W |
Operating temperature | TOPT | 0 to + 70 | |
Storage temperature | TSTG | -55 to + 125 |
The VG26(V)(S)17405FJ CMOS Dynamic RAM organized as 4,194,304 words x 4 bits with extended data out access mode. VG26(V)(S)17405FJ is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply. Low voltage operation is more suitable to be used on battery backup,portable electronic application. A new refresh feature called "self-refresh" is supported and very slow CBR cycles are being performed. lt is packaged in JEDEC standard 26/24-pin plastic SOJ.