DescriptionThe VG26V18165CJ5 is designed as one kind of CMOS Dynamic RAM device that is organized as 1,048,576 words x 16 bits with extended data out access mode. Also this device is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy po...
VG26V18165CJ5: DescriptionThe VG26V18165CJ5 is designed as one kind of CMOS Dynamic RAM device that is organized as 1,048,576 words x 16 bits with extended data out access mode. Also this device is fabricated with...
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Features: • Single 5V ( %) or 3.3V ( %) only power supply• High speed tRAC access time...
Features: • Single 5V (±10%) or 3.3V (+10%,-5%) only power supply• High speed tRAC acc...
Features: • Single 5V(±10%) or 3.3V(+10%,-5%) only power supply• High speed t RAC aces...
The VG26V18165CJ5 is designed as one kind of CMOS Dynamic RAM device that is organized as 1,048,576 words x 16 bits with extended data out access mode. Also this device is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V oniy power supply.
Features of the VG26V18165CJ5 are:(1)Single 5V(+/-10 %) or 3.3V(+/-10 %) only power supply;(2)High speed tRAC acess time: 50/60 ns;(3)Extended - data - out(EDO) page mode access;(4)1024 refresh cycle in 16 ms(Std.) or 128 ms(S-version);(5)I/O level: TTL compatible (Vcc = 5V) or LVTTL compatible (Vcc = 3.3V).
The absolute maximum ratings of the VG26V18165CJ5 can be summarized as:(1)Voltage on any pin relative to Vss (5V): -1.0 to +7.0 V;(2)Voltage on any pin relative to Vss (3.3V): -0.5 to +4.6 V;(3)Supply voltage relative to Vss (5V): -1.0 to +7.0 V;(4)Supply voltage relative to Vss (3.3V): -0.5 to +4.6 V;(5)Short circuit output current: 50 mA;(6)Power dissipation: 1.0 W;(7)Operating temperature: 0 to +70 ;(8)Storage temperature: -55 to +125 . If you want to know more information such as the electrical characteristics about the VG26V18165CJ5, please download the datasheet in www.seekic.com or www.chinaicmart.com.