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US5U30

Features: · The US5U30 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.· Pch MOSFET have a low on-state resistance with a fast switching.· Pch MOSFET is reacted a low voltage drive(2.5V)· The Independently connected Schottky barrier diode have a low forward voltate.Appl...

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SeekIC No. : 004538694 Detail

US5U30: Features: · The US5U30 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.· Pch MOSFET have a low on-state resistance with a fast switching.· Pch MOSFET is reacted a low vol...

US5U30 Data Sheet

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Part Number:
US5U30
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Description



Features:

· The US5U30 conbines Pch MOSFET with a Schottky barrier diode in a single TSMT5 package.
· Pch MOSFET have a low on-state resistance with a fast switching.
· Pch MOSFET is reacted a low voltage drive(2.5V)
· The Independently connected Schottky barrier diode have a low forward voltate.


Application

·Load switch, DC/DC conversion


Specifications

Parameter
Symbol
Limits
Unit
Drain−source voltage
VDSS
-20
V
Gate−source voltage
VGSS
±12
V
Drain current Continuous
ID
±1
A
Pulsed
IDP
±4
APW 10s DUTY CYCLE 1%
Source current Continuous
(Body diode) Pulsed
IS
ISP
−0.4
−4
APW 10s DUTY CYCLE 1%
Channel temperature
Tch
150
C
Repetitive peak reverse voltage
VRM
25
V
Reverse voltage
VR
20
V
Forward current
IF
0.7
A
Forward current surge peak
IFSM
3.0
A W/TOTAL/MOUNTED ON
A CERAMIC BOARD
Junction temperature
Tj
150
°C
Total power dissipation
PD
1.0
W/TOTAL/MOUNTED ON
A CERAMIC BOARD
Range of storage temperature
Tstg
−55 to +125
°C



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