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US5U1

Features: 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.2) High-speed switching, Low On-resistance.3) Low voltage drive (2.5V drive).4) Built-in Low VF schottky barrier diode.ApplicationSwitchingSpecifications Parameter Symbol Limits Unit Drain-source voltage VDSS ...

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SeekIC No. : 004538691 Detail

US5U1: Features: 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.2) High-speed switching, Low On-resistance.3) Low voltage drive (2.5V drive).4) Built-in Low VF schottky barrier diode.App...

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US5U1
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Upload time: 2024/12/21

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Product Details

Description



Features:

1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.
2) High-speed switching, Low On-resistance.
3) Low voltage drive (2.5V drive).
4) Built-in Low VF schottky barrier diode.


Application

Switching


Specifications

Parameter Symbol Limits Unit
Drain-source voltage VDSS 30 V
Gate-source voltage VGSS 12 V
Drain current Continuous ID ±1.5 A
Pulsed IDP*1 ±6.0 A
Source current
(Body diode)		 Continuous IS 0.75 A
Pulsed ISP*1 6.0 A
Power dissipation PD*2 0.7 W / ELEMENT
Channel temperature Tch 150
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board


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