US5U29 Selling Leads, Price trend, US5U29 DataSheet download, circuit diagram from SeekIC.com

Features: · The US5U29 conbines Pch MOSFET with a Schottky barrier diode in a single TUMT5 package.· Pch MOSFET have a low on-state resistance with a fast switching.· Pch MOSFET is reacted a low voltage drive(2.5V)· The Independently connected Schottky barrier diode have a low forward voltate.Appl...

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SeekIC No. : 004538692 Detail

US5U29: Features: · The US5U29 conbines Pch MOSFET with a Schottky barrier diode in a single TUMT5 package.· Pch MOSFET have a low on-state resistance with a fast switching.· Pch MOSFET is reacted a low vol...

US5U29 Data Sheet

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Part Number:: US5U29
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/21

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Recent History
What is this?

US5U1 evaluate
Features: 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.2) High-speed switchin...
US5U1TR evaluate
US $.11 - .12 / Piece

MOSFET N-CH 30V 1.5A
US5U29TR evaluate
US $.12 - .13 / Piece

MOSFET P-CH 20V 1A

Product Details

Description

Features:

· The US5U29 conbines Pch MOSFET with a Schottky barrier diode in a single TUMT5 package.
· Pch MOSFET have a low on-state resistance with a fast switching.
· Pch MOSFET is reacted a low voltage drive(2.5V)
· The Independently connected Schottky barrier diode have a low forward voltate.

Application

·Load switch, DC/DC conversion

Specifications

Parameter	Symbol	Limits	Unit
Drain−source voltage	V_DSS	-20	V
Gate−source voltage	V_GSS	±12	V
Drain current Continuous	I_D	±1	A
Pulsed	I_DP	±4	APW 10s DUTY CYCLE 1%
Source current Continuous (Body diode) Pulsed	I_S I_SP	−0.4 −4	APW 10s DUTY CYCLE 1%
Channel temperature	T_ch	150	C
Repetitive peak reverse voltage	V_RM	25	V
Reverse voltage	V_R	20	V
Forward current	I_F	0.7	A
Forward current surge peak	I_FSM	3.0	A W/TOTAL/MOUNTED ON A CERAMIC BOARD
Junction temperature	T_j	150	°C
Total power dissipation	P_D	1.0	W/TOTAL/MOUNTED ON A CERAMIC BOARD
Range of storage temperature	T_stg	−55 to +125	°C

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US5U29

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