Features: 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.2) High-speed switching, Low On-resistance.3) Low voltage drive (2.5V drive).4) Built-in Low VF schottky barrier diode.ApplicationSwitchingSpecifications Parameter Symbol Limits Unit Drain-source voltage VDSS ...
US5U3: Features: 1) Nch MOSFET and schottky barrier diode are put in TUMT5 package.2) High-speed switching, Low On-resistance.3) Low voltage drive (2.5V drive).4) Built-in Low VF schottky barrier diode.App...
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Parameter | Symbol | Limits | Unit | |
Drain-source voltage | VDSS | 30 | V | |
Gate-source voltage | VGSS | 12 | V | |
Drain current | Continuous | ID | ±1.5 | A |
Pulsed | IDP*1 | ±6.0 | A | |
Source current (Body diode) |
Continuous | IS | 0.6 | A |
Pulsed | ISP*1 | 6.0 | A | |
Power dissipation | PD*2 | 0.7 | W / ELEMENT | |
Channel temperature | Tch | 150 |