UPA895TD

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

LOW VOLTAGE, LOW CURRENT OPERATION
SMALL PACKAGE OUTLINE:1.2 mm x 0.8 mm
LOW HEIGHT PROFILE:Just 0.50 mm high
TWO LOW NOISE OSCILLATOR TRANSISTORS:NE851
IDEAL FOR 1-3 GHz OSCILLATORS


Pinout




Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
			Q1	Q2
VCBO	Collector to Base Voltage	V
VCEO	Collector to Emitter Voltage	V	9	9
VEBO	Emitter to Base Voltage	V	1.5	1.5
IC	Collector Current	mA	100	100
PT	Total Power Dissipation2	mW	190 for 1 element
			210 for 2 elements
TJ	Junction Temperature		150	150
TSTG	Storage Temperature		-65 to +150

Description

NEC's UPA895TD contains two NE851 high frequency silicon bipolar chips. The NE851 is an excellent oscillator chip, featur-ing low 1/f noise and high immunity to pushing effects.  NEC's new ultra small TD package is ideal for all portable wireless applications where reducing board space is a prime consider-ation. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications.