UPA862TD

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• LOW VOLTAGE, LOW CURRENT OPERATION
• SMALL PACKAGE OUTLINE:1.2 mm x 0.8 mm
• LOW HEIGHT PROFILE:Just 0.50 mm high
• TWO DIFFERENT DIE TYPES:
    Q1 - Ideal buffer amplifier transistor
    Q2 - Ideal oscillator transistor
• IDEAL FOR 1-2 GHz OSCILLATORS


Pinout




Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
			Q1	Q2
VCBO	Collector to Base Voltage	V	9	9
VCEO	Collector to Emitter Voltage	V	6	5.5
VEBO	Emitter to Base Voltage	V	2	1.5
IC	Collector Current	mA	30	100
PT	Total Power Dissipation1	mW	180	192
			210 Total
TJ	Junction Temperature	°C	150	150
TSTG	Storage Temperature	°C	-65 to +150

Note: 1. Operation in excess of any one of these parameters may result in permanent damage.
          2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB


Description

NEC's UPA862TD contains one NE851 and one NE685 NPN high frequency silicon bipolar chip. The NE851 is an excellent oscillator chip, featuring low 1/f noise and high immunity to pushing effects. The NE685 is an excellent buffer transistor,featuring low noise and high gain. NEC's new ultra small TD package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications.