Transistors RF Bipolar Small Signal NPN Silicon RF Twin
UPA861TD: Transistors RF Bipolar Small Signal NPN Silicon RF Twin
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Configuration : | Single |
• LOW VOLTAGE, LOW CURRENT OPERATION
• LOW CAPACITANCE FOR WIDE TUNING RANGE
• SMALL PACKAGE OUTLINE: 1.2 mm x 0.8 mm
• LOW HEIGHT PROFILE: Just 0.50 mm high
• TWO DIFFERENT DIE TYPES:
Q1 - Ideal buffer amplifier transistor
Q2 - Ideal oscillator transistor
• IDEAL FOR >3 GHz OSCILLATORS
SYMBOLS |
PARAMETERS |
UNITS |
RATINGS | |
Q1 |
Q2 | |||
VCBO |
Collector to Base Voltage |
V |
5 |
9 |
VCEO |
Collector to Emitter Voltage |
V |
3 |
3 |
VEBO |
Emitter to Base Voltage |
V |
2 |
1.5 |
IC |
Collector Current |
mA |
30 |
35 |
PT |
Total Power Dissipation1 |
mW |
90 |
105 |
195 Total | ||||
TJ |
Junction Temperature |
150 |
150 | |
TSTG |
Storage Temperature |
-65 to +150 |
Note:
1. Operation in excess of any one of these parameters may
result in permanent damage.
2. Mounted on 1.08cm2 x 1.0 mm(t) glass epoxy PCB
NEC's UPA861TD contains one NE894 and one NE687 NPN high frequency silicon bipolar chip. The NE894 is an excellent oscillator chip, featuring high fT and low current, low voltage operation. The NE687 is an excellent buffer transistor, featuring low noise and high gain. NEC's new ultra small TD package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for oscillator/buffer amplifier and other applications.