UPA835TF

• LOW NOISE:Q1:NF = 1.5 dB TYP at f = 2 GHz, VCE = 3 V, lc = 3 mA Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
• HIGH GAIN:Q1: |S21E|2 = 8.5 dB TYP at f = 1 GHz, VCE = 3 V,lc = 10 mA Q2: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V,lc = 7 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS (Q1: NE685, Q2: NE856)

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. When operating both devices, the power dissipation for either device should not exceed 110 mW.

The UPA835TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs.