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UPA835TC-T1

Features: • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA• High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA• Flat-lead 6...

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SeekIC No. : 004537910 Detail

UPA835TC-T1: Features: • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA• High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, V...

UPA835TC-T1 Data Sheet

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Part Number:
UPA835TC-T1
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

• Low noise
Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA
Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain
Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA
Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
• Built-in 2 different transistors (2SC5010, 2SC5006)


Pinout

Connection Diagram


Specifications

Parameter
Symbol
Ratings
Unit
Q1
Q2
Collector to Base Voltage
VEBO
9
20
V
Collector to Emitter Voltage
VEBO
6
12
V
Emitter to Base Voltage
VEBO
2
3
V
Collector Current
IC
30
100
mW
Total Power Dissipation
PTNote
180 in 1 element
200 in 1 element
mW
230 in 2 elements
Junction Temperature
Tj
150
150
°C
Storage Temperature
Tstg
-65 to +150
°C



Description

The UPA835TC-T1 has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.


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