UPA835TC-T1 Selling Leads, Price trend, UPA835TC-T1 DataSheet download, circuit diagram from SeekIC.com

Features: • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA• High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA• Flat-lead 6...

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SeekIC No. : 004537910 Detail

UPA835TC-T1: Features: • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA• High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, V...

UPA835TC-T1 Data Sheet

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Part Number:: UPA835TC-T1
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

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15 Days

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Product Details

Description

Features:

• Low noise
Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA
Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain
Q1 : |S21e|² = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA
Q2 : |S21e|² = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
• Built-in 2 different transistors (2SC5010, 2SC5006)

Pinout

Connection Diagram

Specifications

Parameter	Symbol	Ratings		Unit
Parameter	Symbol	Q1	Q2	Unit
Collector to Base Voltage	V_EBO	9	20	V
Collector to Emitter Voltage	V_EBO	6	12	V
Emitter to Base Voltage	V_EBO	2	3	V
Collector Current	I_C	30	100	mW
Total Power Dissipation	P_T^Note	180 in 1 element	200 in 1 element	mW
Total Power Dissipation	P_T^Note	230 in 2 elements		mW
Junction Temperature	T_j	150	150	°C
Storage Temperature	T_stg	-65 to +150		°C

Description

The UPA835TC-T1 has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

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UPA835TC-T1

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