Features: • LOW NOISE: Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA• HIGH GAIN: Q1: |S21E|2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA• 6-PIN THIN-TYPE...
UPA834TF-T1: Features: • LOW NOISE: Q1:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA• HIGH GAIN: Q1: |S21E|2 = 12.0 dB TYP at f = 1 GHz, VCE...
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SYMBOL | PARAMETER | RATINGS | UNIT | |
Q1 | Q2 | |||
VCBO | Collector-base voltage | 20 | 20 | V |
VCEO | Collector-emitter voltage | 10 | 12 | V |
VEBO | Emitter-base voltage | 1.5 | 3 | V |
IC | Collector Current | 65 | 100 | mA |
PT | Collector power dissipation |
150 | 150 | mW |
2002 | ||||
Tj | Junction temperature | 150 | ||
TSTG | Storage temperature | -65to+150 |
The UPA834TF-T1 has two different built-in transistors for low costamplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range and excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs.