UPA833TF

Features: • Low noise Q1 : NF = 1.7 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA Q2 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA• High gain Q1 : |S21e|2 = 3.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA Q2 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA• 6-pin thin-...

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UPA833TF Picture
SeekIC No. : 004537907 Detail

UPA833TF: Features: • Low noise Q1 : NF = 1.7 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA Q2 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA• High gain Q1 : |S21e|2 = 3.5 dB TYP. @ f = 2 GHz, V...

floor Price/Ceiling Price

Part Number:
UPA833TF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

• Low noise Q1 : NF = 1.7 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA Q2 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA
• High gain Q1 : |S21e|2 = 3.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA Q2 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA
• 6-pin thin-type small mini mold package
• 2 different transistors on-chip (2SC5193, 2SC4959)



Pinout

  Connection Diagram


Specifications

          PARAMETERS

SYMBOLS

RATING

UNIT
Q1 Q2

Collector to Base Voltage

VCBO

9

9

V

Collector to Emitter Voltage

VCEO

6

6

V

Emitter to Base Voltage

VEBO

2

2

V

Collector Current

IC

100

30

mA

Total Power Dissipation

PT 150 in 1element 150 in 1element mW

200 in 2 elementsNote

Junction Temperature  TJ 150 150  
Storage Temperature  TSTG -65 to +150  


 

 

 

 

 

 

 

Note 110 mW must not be exceeded for 1 element.




Description

The UPA833TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.


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