UPA831TF

Features: • LOW NOISE:Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA• HIGH GAIN:Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V,lc = 7 mA Q2: |S21E|2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V,lc = 7 mA• 6-PIN THIN-TYPE SMA...

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SeekIC No. : 004537905 Detail

UPA831TF: Features: • LOW NOISE:Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA• HIGH GAIN:Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = ...

floor Price/Ceiling Price

Part Number:
UPA831TF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

• LOW NOISE:Q1:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA Q2:NF = 1.4 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA
• HIGH GAIN:Q1: |S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V,lc = 7 mA Q2: |S21E|2 = 12.0 dB TYP at f = 1 GHz, VCE = 3 V,lc = 7 mA
• 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE
• 2 DIFFERENT BUILT-IN TRANSISTORS (Q1: NE856, Q2: NE681)



Specifications

SYMBOLS

          PARAMETERS

UNITS

RATINGS

      Q1 Q2

VCBO

Collector to Base Voltage

V

20

20

VCEO

Collector to Emitter Voltage

V

12

10

VEBO

Emitter to Base Voltage

V

3

1.5

IC

Collector Current

mA

100

65

 PT

Total Power Dissipation

mW 110 110

2002

TJ Junction Temperature   150 150
TSTG Storage Temperature   -65 to +150


 

 

 

 

 

 


Note:
1. Operation in excess of any one of these parameters may result in permanent damage.
2. When operating both devices, the power dissipation for either device should not exceed 110 mW.




Description

The UPA831TF has two different built-in transistors for low cost amplifier and oscillator applications in the VHF/UHF band. Low noise figures, high gain, high current capability, and medium output give this device high dynamic range with excellent linearity for two-stage amplifiers. This device is also ideally suited for use in a VCO/buffer amplifier application. The thinner package style allows for higher density designs.




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