UPA831TC-T1 Selling Leads, Price trend, UPA831TC-T1 DataSheet download, circuit diagram from SeekIC.com

Features: • Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA• High gain Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA• Flat-lead 6-pin thin-type ultra super minimold package• 2 different built...

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SeekIC No. : 004537904 Detail

UPA831TC-T1: Features: • Low noise Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP. @f = 1 GHz, VCE = 3 V, IC = 7 mA• High gain Q1 : |S21e|2 = 9.0 dB TYP., Q2 : |S21e|2 = 12.0 dB TYP. @f = 1 GHz, VCE = 3...

UPA831TC-T1 Data Sheet

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Part Number:: UPA831TC-T1
Supply Ability:: 5000

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1~5000

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Negotiable

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15 Days

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Product Details

Description

Features:

• Low noise
Q1 : NF = 1.2 dB TYP., Q2 : NF = 1.4 dB TYP.
@f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain
Q1 : |S21e|² = 9.0 dB TYP., Q2 : |S21e|² = 12.0 dB TYP.
@f = 1 GHz, VCE = 3 V, IC = 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
• 2 different built-in transistors (2SC5006, 2SC5007)

Pinout

Connection Diagram

Specifications

Parameter	Symbol	Ratings		Unit
Parameter	Symbol	Q1	Q2	Unit
Collector to Base Voltage	V_EBO	20	20	V
Collector to Emitter Voltage	V_EBO	12	10	V
Emitter to Base Voltage	V_EBO	3	1.5	V
Collector Current	I_C	100	65	mW
Total Power Dissipation	P_T^Note	200 in 1 element	200 in 1 element	mW
Total Power Dissipation	P_T^Note	230 in 2 elements		mW
Junction Temperature	T_j	150	150	°C
Storage Temperature	T_stg	-65 to +150		°C

Description

The UPA831TC-T1 has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

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