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UPA826TF

Features: • LOW NOISE AND HIGH GAIN• OPERABLE AT LOW VOLTAGE• SMALL FEEDBACK CAPACITANCE:Cre = 0.4 pF TYP• SMALL PACKAGE STYLE:2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm packageSpecifications SYMBOLS PARAMETERS UNITS RATINGS VCBO Collector to Base Volt...

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SeekIC No. : 004537899 Detail

UPA826TF: Features: • LOW NOISE AND HIGH GAIN• OPERABLE AT LOW VOLTAGE• SMALL FEEDBACK CAPACITANCE:Cre = 0.4 pF TYP• SMALL PACKAGE STYLE:2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm packag...

UPA826TF Data Sheet

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Part Number:
UPA826TF
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

• LOW NOISE AND HIGH GAIN
• OPERABLE AT LOW VOLTAGE
• SMALL FEEDBACK CAPACITANCE:Cre = 0.4 pF TYP
• SMALL PACKAGE STYLE:2 NE685 die in a 2 mm x 1.25 mm x 0.6 mm package


Specifications

SYMBOLS

          PARAMETERS

UNITS

RATINGS

VCBO

Collector to Base Voltage

V

9

VCEO

Collector to Emitter Voltage

V

6

VEBO

Emitter to Base Voltage

V

2

IC

Collector Current

mA

30

 PT

Total Power Dissipation
1 Element
2 Elements2

 mW
mW		 150
200
TJ Junction Temperature   150
TSTG Storage Temperature   -65 to +150

 

 

 

 

 

 


Note:
1.Operation in excess of any one of these parameters may result in permanent damage.
2.When operating both devices, the power dissipation for either device should not exceed 110 mW.




Description

The UPA826TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored applications.This device is suitable for very low voltage/low current, and low noise applications. The thinner package style allows for higher density designs.




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