UPA821TF Selling Leads, Price trend, UPA821TF DataSheet download, circuit diagram from SeekIC.com

Features: • LOW NOISE:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA• HIGH GAIN:|S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA• SMALL PACKAGE STYLE:2 NE856 die in a 2 mm x 1.25 mm x 0.6 mm packagePinoutSpecifications SYMBOLS PARAMETERS UNITS RATINGS ...

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SeekIC No. : 004537895 Detail

UPA821TF: Features: • LOW NOISE:NF = 1.2 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA• HIGH GAIN:|S21E|2 = 9.0 dB TYP at f = 1 GHz, VCE = 3 V, lc = 7 mA• SMALL PACKAGE STYLE:2 NE856 die in a 2 ...

UPA821TF Data Sheet

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Part Number:: UPA821TF
Supply Ability:: 5000

Price Break

Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Product Details

Description

Features:

• LOW NOISE:NF = 1.2 dB TYP at f = 1 GHz, V_CE = 3 V, lc = 7 mA
• HIGH GAIN:|S_21E|2 = 9.0 dB TYP at f = 1 GHz, V_CE = 3 V, lc = 7 mA
• SMALL PACKAGE STYLE:2 NE856 die in a 2 mm x 1.25 mm x 0.6 mm package

Pinout

Connection Diagram

Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
V_CBO	Collector to Base Voltage	V	20
V_CEO	Collector to Emitter Voltage	V	12
V_EBO	Emitter to Base Voltage	V	3
I_C	Collector Current	mA	1000
P_T	Total Power Dissipation 1 Die 2 Die2	mW mW	150 200
T_J	Junction Temperature		150
T_STG	Storage Temperature		-65 to +150

Note:
1.Operation in excess of any one of these parameters may result in permanent damage.
2.When operating both devices, the power dissipation for either device should not exceed 110 mW.

Description

The UPA821TF has two built-in low-voltage transistors which are designed for low-noise amplification in the VHF to UHF band. The two die are chosen from adjacent locations on the wafer. These features combined with the pin configuration make this device ideal for balanced or mirrored applications.Low noise figures, high gain, and high current capability equate to wide dynamic range and excellent linearity. The thinner package style allows for higher density designs.

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UPA821TF

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