DescriptionThe UPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band.. Features of the UPA821TC are:(1)low noise:NF= 1.2 dB TYP.@ f=1 GHz,VCE=3V,IC =7mA;(2)high gain:IS21el2=9.0 dB TYP.@ f =1GHz,VCE=3V,IC=7mA;(3)flat-lead 6-pin thi...
UPA821TC: DescriptionThe UPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band.. Features of the UPA821TC are:(1)low noise:NF= 1.2 dB TYP.@ f...
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The UPA821TC has built-in low-voltage two transistors which are designed for low-noise amplification in the VHF to UHF band..
Features of the UPA821TC are:(1)low noise:NF= 1.2 dB TYP.@ f=1 GHz,VCE=3V,IC =7mA;(2)high gain:IS21el2=9.0 dB TYP.@ f =1GHz,VCE=3V,IC=7mA;(3)flat-lead 6-pin thin-type ultra super minimold package;(4)built-in 2 transistors (2 ´2SC5006).
The absolute maximum ratings of the UPA821TC can be summarized as:(1):the parameter is collector to base voltage,the symbol is VCBO,the rating is 20,the unit is V;(2):the parameter is collector to emitter voltage,the symbol is VCEO,the rating is 12,the unit is V;(3):the parameter is emitter to base voltage,the symbol is VEBO,the rating is 3,the unit is V;(4):the parameter is collector current,the symbol is IC,the rating is 100,the unit is mA;(5):the parameter is total power dissipation,the symbol is PT,the rating is 200 in 1 element,the unit is mW;(6):the parameter is total power dissipation,the symbol is PT,the rating is 230 in 2 element,the unit is mW;(7):the parameter is junction temperature,the symbol is Tj,the rating is 150,the unit is ;(8):the parameter is storage temperature,the symbol is Tstg,the rating is -65 to 150,the unit is .