UPA814T

Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum Operating Temperature :
Packaging :
Configuration : Single
Transistor Polarity : NPN
Continuous Collector Current : 0.1 A
Package / Case : SO-6
Power Dissipation : 0.11 W


Features:

• SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz
• HIGH GAIN BANDWIDTH: fT = 9 GHz
• HIGH COLLECTOR CURRENT: 100 mA

Specifications

Note:
1.Operation in excess of any one of these parameters may result in permanent damage.

Description

NEC's UPA814T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package.

Each transistor UPA814T is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications.