UPA811T

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE: NF = 1.9 dB TYP at 2 GHz
• HIGH GAIN: |S21E|2 = 7.5 dB TYP at 2 GHz
• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE


Specifications

SYMBOL	PARAMETER	VALUE	UNIT
VCBO	Collector-base voltage	20	V
VCBO	Collector-emitter voltage	10	V
VEBO	Emitter-base voltage	1.5	V
IC	Collector current	35	A
PT	Total Power Dissipation 1 Die 2 Die	110 200	mW mW
TJ	Junction Temperature	150
Tstg	Storage Temperature Range	-65~150

Note:
1. Operation in excess of any one of these parameters may result in permanent damage.


Description

NEC's UPA811T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device ideally suited for pager and other hand-held wireless applications.