UPA810TF

Features:

• SMALL PACKAGE OUTLINE:
   SOT-363 package measures just 2 mm x 1.25 mm
• LOW HEIGHT PROFILE:
   Just 0.60 mm hight
• HIGH COLLECTOR CURRENT:
   I_C MAX = 100 mA


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCBO	Collector to Base Voltage	V	20
VCEO	Collector to Emitter Voltage	V	12
VEBO	Emitter to Base Voltage	V	3
IC	Collector Current	mA	200
PT	Total Power Dissipation 1 Die 2 Die	mW mW	110 200
TJ	Junction Temperature		150
TSTG	Storage Temperature		-65 to +150

Note: 1.Operation in excess of any one of these parameters may result in permanent damage.


Description

The UPA810TF contains two NE856 NPN high frequency silicon bipolar chips. NEC's new low profile TF package is ideal for all portable wireless applicatons where reducing component height is a prime consideration. Each transistor chip is independently mounted and easily configured for two stage cascade LNAs and other similar applications.