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UPA809T

Features: • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package• LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz• HIGH GAIN BANDWIDTH: fT = 9 GHz• HIGH COLLECTOR CURRENT: 100 mASpecifications SYMBOLS PARAMETERS UNITS RATINGS VCBOVCEOVEBOICPTTJTSTG...

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SeekIC No. : 004537888 Detail

UPA809T: Features: • SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package• LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz• HIGH GAIN BANDWIDTH: fT = 9 GHz• HIGH COLLECTOR CURRENT:...

UPA809T Data Sheet

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Part Number:
UPA809T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

• SMALL PACKAGE STYLE: 2 NE688 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE: NF = 1.5 dB TYP at 2 GHz
• HIGH GAIN BANDWIDTH: fT = 9 GHz
• HIGH COLLECTOR CURRENT: 100 mA


Specifications

SYMBOLS
PARAMETERS
UNITS
RATINGS
VCBO
VCEO
VEBO
IC
PT


TJ
TSTG
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
V
V
V
mA
mW
mW


°C
°C
9
6
2
100
110
200


150
-65 to +150
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.


Description

The UPA809T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications.




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