Features: • SMALL PACKAGE OUTLINE:1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE Just 0.55 mm high• FLAT LEAD STYLE:Reduced lead inductance improves electrical performance• HIGH COLLECTOR CURRENT:IC MAX = 65 mASpecifications SYMBOLS...
UPA808TC: Features: • SMALL PACKAGE OUTLINE:1.5 mm x 1.1 mm, 33% smaller than conventional SOT-363 package • LOW HEIGHT PROFILE Just 0.55 mm high• FLAT LEAD STYLE:Reduced lead inductance imp...
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SYMBOLS | PARAMETERS | UNITS | RATINGS |
VCBO | Collector to Base Voltage | V | 20 |
VCEO | Collector to Emitter Voltage | V | 10 |
VEBO | Emitter to Base Voltage | V | 1.5 |
IC | Collector Current | mA | 65 |
PT | Total Power Dissipation 1 Die 2 Die |
mW mW |
TBD TBD |
TJ | Junction Temperature | °C | 150 |
TSTG | Storage Temperature | °C | -65 to +150 |
The UPA808TC contains two NE687 NPN high frequency silicon bipolar chips. NEC's new ultra small TC package is ideal for all portable wireless applications where reducing board space is a prime consideration. Each transistor chip is independently mounted and easily configured for two stage cascode LNAs and other applications.