Features: • SMALL PACKAGE STYLE:2 NE687 Die in a 2 mm x 1.25 mm package• LOW NOISE FIGURE:NF = 1.3 dB TYP at 2 GHz• HIGH GAIN:|S21E|2 = 8.5 dB TYP at 2 GHz• LOW CURRENT OPERATIONSpecifications Parameter Symbol Ratings UNIT Collector-base voltage BVCBO 5 V C...
UPA808T: Features: • SMALL PACKAGE STYLE:2 NE687 Die in a 2 mm x 1.25 mm package• LOW NOISE FIGURE:NF = 1.3 dB TYP at 2 GHz• HIGH GAIN:|S21E|2 = 8.5 dB TYP at 2 GHz• LOW CURRENT OPERA...
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Parameter | Symbol | Ratings | UNIT |
Collector-base voltage | BVCBO | 5 | V |
Collector-emitter voltage | BVCEO | 3 | V |
Emitter-base voltage | BVEBO | 2 | V |
Collector current | IC | 30 | mA |
Power dissipation 1 Die 2 Die |
PT | 90 180 |
mW |
Jumction temperature | Tj | 150 | |
Storage temperature | Tstg | 55 to +150 |
NEC's UPA808T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications