UPA808T

Features: • SMALL PACKAGE STYLE:2 NE687 Die in a 2 mm x 1.25 mm package• LOW NOISE FIGURE:NF = 1.3 dB TYP at 2 GHz• HIGH GAIN:|S21E|2 = 8.5 dB TYP at 2 GHz• LOW CURRENT OPERATIONSpecifications Parameter Symbol Ratings UNIT Collector-base voltage BVCBO 5 V C...

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SeekIC No. : 004537886 Detail

UPA808T: Features: • SMALL PACKAGE STYLE:2 NE687 Die in a 2 mm x 1.25 mm package• LOW NOISE FIGURE:NF = 1.3 dB TYP at 2 GHz• HIGH GAIN:|S21E|2 = 8.5 dB TYP at 2 GHz• LOW CURRENT OPERA...

floor Price/Ceiling Price

Part Number:
UPA808T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/4

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Product Details

Description



Features:

• SMALL PACKAGE STYLE:
2 NE687 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:
NF = 1.3 dB TYP at 2 GHz
• HIGH GAIN:
|S21E|2 = 8.5 dB TYP at 2 GHz
• LOW CURRENT OPERATION



Specifications

Parameter Symbol Ratings UNIT
Collector-base voltage BVCBO 5 V
Collector-emitter voltage BVCEO 3 V
Emitter-base voltage BVEBO 2 V
Collector current IC 30 mA
Power dissipation
1 Die
2 Die
PT 90
180
mW
Jumction temperature Tj 150
Storage temperature Tstg 55 to +150
Note: 1.Operation in excess of any one of these parameters
may result in permanent damage.



Description

NEC's UPA808T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications




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