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UPA807T

Features: • SMALL PACKAGE STYLE:2 NE686 Die in a 2 mm x 1.25 mm package• LOW NOISE FIGURE:NF = 1.5 dB TYP at 2 GHz• HIGH GAIN:|S21E|2 = 9 dB TYP at 2 GHz• HIGH GAIN BANDWIDTH: fT = 13 GHz• LOW CURRENT OPERATIONSpecifications SYMBOLS PARAMETERS UNIT RAT...

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SeekIC No. : 004537885 Detail

UPA807T: Features: • SMALL PACKAGE STYLE:2 NE686 Die in a 2 mm x 1.25 mm package• LOW NOISE FIGURE:NF = 1.5 dB TYP at 2 GHz• HIGH GAIN:|S21E|2 = 9 dB TYP at 2 GHz• HIGH GAIN BANDWIDTH...

UPA807T Data Sheet

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Part Number:
UPA807T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

• SMALL PACKAGE STYLE:
2 NE686 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:
NF = 1.5 dB TYP at 2 GHz
• HIGH GAIN:
|S21E|2 = 9 dB TYP at 2 GHz
• HIGH GAIN BANDWIDTH: fT = 13 GHz
• LOW CURRENT OPERATION


Specifications

SYMBOLS
PARAMETERS
UNIT
RATINGS
VEBO Collector to Base Voltage
V
5
VCEO Collector to Emitter Voltage
V
3
VEBO Emitter to Base Voltage
V
2
IC Collector Current
mA
10
PT Total Power Dissipation
1 Die
2 Die
mW
mW
30
60
TJ Junction Temperature
150
TSTG Storage Temperature
-65 to +150
Note: 1.Operation in excess of any one of these parameters may result in permanent damage.


Description

NEC's UPA807T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications.




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