UPA806T

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• SMALL PACKAGE STYLE:2 NE685 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:NF = 1.5 dB TYP at 2 GHz
• HIGH GAIN:|S21E|2 = 8.5 dB TYP at 2 GHz
• HIGH GAIN BANDWIDTH: fT = 12 GHz
• EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE


Specifications

SYMBOLS	PARAMETERS	UNITS	RATINGS
VCBO	Collector to Base Voltage	V	9
VCEO	Collector to Emitter Voltage	V	6
VEBO	Emitter to Base Voltage	V	2
IC	Collector Current	mA	30
PT	Total Power Dissipation                   1 Die                    2 Die	mW mW	110 200
TJ	Junction Temperature		150
TSTG	Storage Temperature		-65 to +150

Note: 1. Operation in excess of any one of these parameters may result in permanent damage.


Description

NEC's UPA806T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device suited for various hand-held wireless applications