Transistors RF Bipolar Small Signal NPN High Frequency
UPA806T-A: Transistors RF Bipolar Small Signal NPN High Frequency
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Configuration : | Dual | Transistor Polarity : | NPN |
Collector- Emitter Voltage VCEO Max : | 6 V | Emitter- Base Voltage VEBO : | 2 V |
Continuous Collector Current : | 0.03 A | Power Dissipation : | 0.1 W, 0.2 W |
Package / Case : | SO-6 |
Technical/Catalog Information | UPA806T-A |
Vendor | NEC |
Category | Discrete Semiconductor Products |
Frequency - Transition | 12GHz |
Noise Figure (dB Typ @ f) | 1.5dB ~ 2.5dB @ 2GHz |
Current - Collector (Ic) (Max) | 30mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 75 @ 10mA, 3V |
Transistor Type | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max) | 6V |
Gain | 7dB ~ 8.5dB |
Power - Max | 200mW |
Compression Point (P1dB) | - |
Package / Case | SC-70-6, SC-88, SOT-323-6, SOT-363 |
Packaging | Bulk |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | UPA806T A UPA806TA |