UPA802T Selling Leads, Price trend, UPA802T DataSheet download, circuit diagram from SeekIC.com

Features: • SMALL PACKAGE STYLE:2 NE681 Die in a 2 mm x 1.25 mm package• LOW NOISE FIGURE:NF = 1.4 dB TYP at 1 GHz• HIGH GAIN:|S21E|2 = 12 dB TYP at 1 GHz• HIGH GAIN BANDWIDTH: fT = 7 GHz• LOW CURRENT OPERATIONSpecifications SYMBOL PARAMETER VALUE UNIT VCBO...

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SeekIC No. : 004537884 Detail

UPA802T: Features: • SMALL PACKAGE STYLE:2 NE681 Die in a 2 mm x 1.25 mm package• LOW NOISE FIGURE:NF = 1.4 dB TYP at 1 GHz• HIGH GAIN:|S21E|2 = 12 dB TYP at 1 GHz• HIGH GAIN BANDWIDT...

UPA802T Data Sheet

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Part Number:: UPA802T
Supply Ability:: 5000

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Qty
1~5000

Unit Price
Negotiable

Processing time
15 Days

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Upload time: 2024/11/22

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UPA800T evaluate
Features: • SMALL PACKAGE STYLE: 2 NE680 Die in a 2 mm x 1.25 mm package• LOW NOISE FI...
UPA800T-A evaluate
US $.59 - .89 / Piece

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Features: • SMALL PACKAGE STYLE: SOT-363 package measures just 2.0 mm x 1.25 mm• LOW H...

Product Details

Description

Features:

• SMALL PACKAGE STYLE:
2 NE681 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE:
NF = 1.4 dB TYP at 1 GHz
• HIGH GAIN:
|S_21E|² = 12 dB TYP at 1 GHz
• HIGH GAIN BANDWIDTH: f_T = 7 GHz
• LOW CURRENT OPERATION

Specifications

SYMBOL	PARAMETER	VALUE	UNIT
V_CBO	Collector-base voltage	20	V
V_CEO	Collector-emitter voltage	10	V
V_EBO	Emitter-base voltage	1.5	V
I_C	Collector Current-Continuous	65	A
P_T	Total Power Dissipation 1 Die 2 Die	110 200	mW mW
T_J	Junction temperature	150
T_stg	Storage temperature	-65 to 150

Note: 1. Operation in excess of any one of these parameters may result in permanent damage.

Description

NEC's UPA802T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT ackage. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high f_T, low voltage bias and small size make this device suited for various hand-held wireless applications.

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UPA802T

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