UPA801T

Transistors RF Bipolar Small Signal NPN High Frequency

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UPA801T Picture
SeekIC No. : 00218932 Detail

UPA801T: Transistors RF Bipolar Small Signal NPN High Frequency

floor Price/Ceiling Price

Part Number:
UPA801T
Mfg:
NEC/CEL
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/22

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Product Details

Quick Details

Configuration : Single    

Description

Transistor Polarity :
Maximum Operating Frequency :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Continuous Collector Current :
Power Dissipation :
Maximum Operating Temperature :
Package / Case :
Packaging :
Configuration : Single


Features:

• SMALL PACKAGE STYLE: 2 NE856 Die in a 2 mm x 1.25 mm package
• LOW NOISE FIGURE: NF = 1.2 dB TYP at 1 GHz
• HIGH GAIN: |S21E|2 = 9.0 dB TYP at 1 GHz
• HIGH COLLECTOR CURRENT: 100mA



Specifications

SYMBOLS PARAMETERS
UNITS
RATINGS
VCBO Collector to Base Voltage
V
20
VCEO Collector to Emitter Voltage
V
12
VEBO Emitter to Base Voltage
V
3
IC Collector Current
mA
100
PT Total Power Dissipation
          1 Die
          2 Die
mW
mW
110
200
TJ Junction Temperature
150
TSTG Storage Temperature
-65 to +150
Note: 1. Operation in excess of any one of these parameters may result in permanent damage.


Description

NEC's UPA801T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device ideally suited for pager and other hand-held wireless applications.




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