Transistors RF Bipolar Small Signal NPN High Frequency
UPA801T: Transistors RF Bipolar Small Signal NPN High Frequency
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Configuration : | Single |
SYMBOLS | PARAMETERS |
UNITS |
RATINGS |
VCBO | Collector to Base Voltage |
V |
20 |
VCEO | Collector to Emitter Voltage |
V |
12 |
VEBO | Emitter to Base Voltage |
V |
3 |
IC | Collector Current |
mA |
100 |
PT | Total Power Dissipation 1 Die 2 Die |
mW mW |
110 200 |
TJ | Junction Temperature |
150 | |
TSTG | Storage Temperature |
-65 to +150 |
NEC's UPA801T is two NPN high frequency silicon epitaxial transistors encapsulated in an ultra small 6 pin SMT package. Each transistor is independently mounted and easily configured for either dual transistor or cascode operation. The high fT, low voltage bias and small size make this device ideally suited for pager and other hand-held wireless applications.