UD61256

The UD61256 is designed as a dynamic write-read-memory with random access. FPM facilitates faster data operation with predefined row address. Via 9 address inputs the 18 address bits are transmitted into the internal address memories in a time-multiplex operation.

UD61256 has nine features. (1)Dynamic random access memory 262144x1 bit manufactured using a CMOS technology. (2)/RAS access time 70ns and 80ns. (3)TTL compatible. (4)Three-state output. (5)256 refresh cycles and 4ms refresh cycle time. (6)Fast page mode. (7)Operating modes: read, write, read-write. (8)Power supply voltage 5V. (7)Packages PDIP16 (300mil) and SOJ20/26 (300 mil). (8)Operating temperature range would be from 0°C to 70°C. (9)Quality assessment according to CECC 90000, CECC 90100 and CECC 90112. Those are all the main features.

Some absolute maximum ratings of UD61256 have been concluded into several points as follow. (1)Its power supply voltage would be min -0.5V and max 7.0V. (2)Its input voltage would be min -1.0V and max 7.0V. (3)Its output voltage would be min -1.0V and max 7.0V. (4)Its output current would be min -50mA and max 50mA. (5)Its power dissipation would be max 1W. (6)Its operating temperature range would be from 0°C to 70°C. (7)Its storage temperature range would be min -55°C and max 125°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of UD61256 are concluded as follow. (1)Its power supply current would be max 70mA. (2)Its FPM current would be 50mA. (3)Its stand-by current would be max 2mA for TTL level and would be max 1mA for CMOS level. (3)Its output high voltage would be would be min 2.4V. (4)Its output low voltage would be max 0.4V. (5)Its input leakage current would be min -10uA and max 10uA. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!