Features: · SMT IRED with extra high radiant power· Low forward voltage· Compatible with automatic placement equipment· EIA and ICE standard package· Suitable for infrared, vapor phase and wavesolder process· Available in 8 mm tape· Suitable for pulse current operation· Peak wavelength p = 870 nm...
TSMF3700: Features: · SMT IRED with extra high radiant power· Low forward voltage· Compatible with automatic placement equipment· EIA and ICE standard package· Suitable for infrared, vapor phase and wavesolde...
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Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Reverse Voltage |
VR |
5 |
V | |
Forward Current |
IF |
100 |
mA | |
Peak Forward Current | tp/T = 0.5, tp = 100s |
IFM |
200 |
mA |
Surge Forward Current | tp = 100s |
IFSM |
1 |
A |
Power Dissipation |
PV |
160 |
mW | |
Junction Temperature |
Tj |
100 |
°C | |
Operating Temperature Range |
Tamb |
55...+100 |
°C | |
Storage Temperature Range |
Tstg |
55...+100 |
°C | |
Soldering Temperature | t 10sec |
Tsd |
260 |
°C |
Thermal Resistance Junction/Ambient |
RthJA |
450 |
K/W |
TSMF3700 is a high speed infrared emitting diode in GaAlAs on GaAlAs double hetero (DH) technology in a miniature PLCC2 SMD package.
TSMF3700 has been designed to meet the increasing demand on optoelectronic devices for surface mounting. The package consists of a lead frame which is surrounded with a white thermoplast. The reflector inside the package is filled up with clear epoxy.