Infrared Emitters 5V 35mW 890nm 17 Deg
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Wavelength : | 870 nm | Radiant Intensity : | 25 mW/sr | ||
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C | ||
Package / Case : | SMD | Packaging : | Reel |
Parameter | Test Conditions | Symbol | Value | Unit |
Reverse Voltage | VR | 5 | V | |
Forward Current | IF | 100 | mA | |
Peak Forward Current | tp/T = 0.5, tp = 100s | IFM | 200 | mA |
Surge Forward Current | tp = 100 s | IFSM | 1.0 | A |
Power Dissipation | PV | mW | ||
Junction Temperature | Tj | 100 | ||
Operating Temperature Range | Tamb | 40...+85 | ||
Storage Temperature Range | Tstg | 40...+85 | ||
Soldering Temperature | t5sec, 2 mm from case | Tsd | 260 |
TSMF1000 is a high efficiency infrared emitting diode in GaAlAs on GaAs technology molded in clear SMD package
In comparison with the standard GaAs on GaAs technology these TSMF1000 emitters achieve about 100 % radiant power improvement at a similar wavelength. The forward voltages at low current and at high pulse current roughly correspond to the low values of the standard technology.Therefore these emitters are ideally suitable as high performance replacements of standard emitters.