Infrared Emitters 5V 35mW 890nm 17 Deg
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Wavelength : | 870 nm | Radiant Intensity : | 25 mW/sr |
Maximum Operating Temperature : | + 85 C | Minimum Operating Temperature : | - 40 C |
Packaging : | Bulk |
Parameter |
Test condition |
Symbol |
Value |
Unit |
Reverse Voltage |
VR |
5 |
V | |
Forward Current |
IF |
100 |
mA | |
Peak Forward Current | tp/T = 0.5, tp = 100 s |
IFM |
200 |
mA |
Surge Forward Current | tp = 100 s |
IFSM |
0.8 |
A |
Power Dissipation |
PV |
190 |
mW | |
Junction Temperature |
Tj |
100 |
||
Operating Temperature Range |
Tamb |
- 40 to + 85 |
||
Storage Temperature Range |
Tstg |
- 40 to + 100 |
||
Soldering Temperature | t 5sec |
Tsd |
<260 |
|
Thermal Resistance Junction/Ambient |
RthJA |
400 |
TSMF1000 series are high speed infrared emitting diodes in GaAlAs/GaAs/GaAlAs double hetero technology (DH) molded in clear SMD package with dome lens.DH chip technology represents best performance for speed, radiant power, forward voltage and longterm reliability.